SIA810DJ MOSFET Transistor

The SIA810DJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA810DJ transistor as follows.

SIA810DJ Transistor Specification

Transistor Code		SIA810DJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-70-6
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.053Ohm
Power Dissipation (Maximum)	PD	1.6W
Drain-Source Capacitance		70pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		32nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		7nC

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