SIA517DJ MOSFET Transistor

The SIA517DJ is a NP-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA517DJ transistor as follows.

SIA517DJ Transistor Specification

Transistor Code		SIA517DJ
Transistor Type		MOSFET
Control Channel Type		NP-Channel
Package		DFN2X2-6L
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	4.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.029(0.061)Ohm
Power Dissipation (Maximum)	PD	1.9W
Operating Junction Temperature (Maximum)		150°C

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