SIA466EDJ MOSFET Transistor

The SIA466EDJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA466EDJ transistor as follows.

SIA466EDJ Transistor Specification

Transistor Code		SIA466EDJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-70-6L
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	15.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0095Ohm
Power Dissipation (Maximum)	PD	3.5W
Drain-Source Capacitance		230pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		22nS
Gate-Threshold Voltage (Maximum)		2.5V
Total Gate Charge		13nC

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