SIA445EDJ MOSFET Transistor

The SIA445EDJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA445EDJ transistor as follows.

SIA445EDJ Transistor Specification

Transistor Code		SIA445EDJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-70-6L
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	11.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0165Ohm
Power Dissipation (Maximum)	PD	3.5W
Drain-Source Capacitance		290pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		1.2V
Total Gate Charge		48nC

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