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SIA430DJT MOSFET Transistor

The SIA430DJT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA430DJT transistor as follows.

Circuit diagram symbol of the SIA430DJT transistor

SIA430DJT Transistor Specification

Transistor Code SIA430DJT
Transistor Type MOSFET
Control Channel Type N-Channel
Package SC-70-6L
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 12A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0135Ohm
Power Dissipation (Maximum) PD 3.5W
Drain-Source Capacitance 200pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 12nC

UXPython is not the creator or an official representative of the SIA430DJT MOSFET transistor. You can download the official SIA430DJT MOSFET transistor datasheet to get more infromation about this transistor.

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