SIA430DJ MOSFET Transistor

The SIA430DJ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA430DJ transistor as follows.

SIA430DJ Transistor Specification

Transistor Code		SIA430DJ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SC-70-6L
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0135Ohm
Power Dissipation (Maximum)	PD	3.5W
Drain-Source Capacitance		200pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		3V
Total Gate Charge		12nC

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