SIA429DJT MOSFET Transistor

The SIA429DJT is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA429DJT transistor as follows.

SIA429DJT Transistor Specification

Transistor Code		SIA429DJT
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-70-6L
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	10.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0205Ohm
Power Dissipation (Maximum)	PD	3.5W
Drain-Source Capacitance		270pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		41nC

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