SIA419DJ MOSFET Transistor

The SIA419DJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA419DJ transistor as follows.

SIA419DJ Transistor Specification

Transistor Code		SIA419DJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-70-6L
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	5V
Drain Current (Maximum)	ID	8.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.03Ohm
Power Dissipation (Maximum)	PD	3.5W
Drain-Source Capacitance		210pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		46nS
Gate-Threshold Voltage (Maximum)		0.85V
Total Gate Charge		19nC

UXPython is not the creator or an official representative of the SIA419DJ MOSFET transistor. You can download the official SIA419DJ MOSFET transistor datasheet to get more infromation about this transistor.

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