SIA417DJ MOSFET Transistor

The SIA417DJ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SIA417DJ transistor as follows.

SIA417DJ Transistor Specification

Transistor Code		SIA417DJ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SC-70-6L
Drain-Source Voltage (Maximum)	VDS	8V
Gate-Source Voltage (Maximum)	VGS	5V
Drain Current (Maximum)	ID	12A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.023Ohm
Power Dissipation (Maximum)	PD	3.5W
Drain-Source Capacitance		500pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		21nC

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