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SI9407BDY MOSFET Transistor

The SI9407BDY is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI9407BDY transistor as follows.

Circuit diagram symbol of the SI9407BDY transistor

SI9407BDY Transistor Specification

Transistor Code SI9407BDY
Transistor Type MOSFET
Control Channel Type P-Channel
Package SO-8
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.12Ohm
Power Dissipation (Maximum) PD 2.4W
Drain-Source Capacitance 70pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 70nS
Gate-Threshold Voltage (Maximum) 3V

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