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SI8812DB MOSFET Transistor

The SI8812DB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI8812DB transistor as follows.

Circuit diagram symbol of the SI8812DB transistor

SI8812DB Transistor Specification

Transistor Code SI8812DB
Transistor Type MOSFET
Control Channel Type N-Channel
Package MICRO-FOOT
Transistor SMD Code AG
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 2.3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.059Ohm
Power Dissipation (Maximum) PD 0.5W
Operating Junction Temperature (Maximum) 150°C
Rise Time 13nS
Gate-Threshold Voltage (Maximum) 1V

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