SI8808DB MOSFET Transistor

The SI8808DB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI8808DB transistor as follows.

SI8808DB Transistor Specification

Transistor Code		SI8808DB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MICRO-FOOT
Transistor SMD Code		AI
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	1.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.095Ohm
Power Dissipation (Maximum)	PD	0.5W
Drain-Source Capacitance		40pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		0.9V

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