SI8805EDB MOSFET Transistor

The SI8805EDB is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI8805EDB transistor as follows.

SI8805EDB Transistor Specification

Transistor Code		SI8805EDB
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MICRO-FOOT
Transistor SMD Code		AC
Drain-Source Voltage (Maximum)	VDS	8V
Gate-Source Voltage (Maximum)	VGS	5V
Drain Current (Maximum)	ID	2.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.068Ohm
Power Dissipation (Maximum)	PD	0.5W
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		0.7V

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