SI8802DB MOSFET Transistor

The SI8802DB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI8802DB transistor as follows.

SI8802DB Transistor Specification

Transistor Code		SI8802DB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MICRO-FOOT
Transistor SMD Code		AB
Drain-Source Voltage (Maximum)	VDS	8V
Gate-Source Voltage (Maximum)	VGS	5V
Drain Current (Maximum)	ID	3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.054Ohm
Power Dissipation (Maximum)	PD	0.5W
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		0.7V

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