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SI8473EDB MOSFET Transistor

The SI8473EDB is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI8473EDB transistor as follows.

Circuit diagram symbol of the SI8473EDB transistor

SI8473EDB Transistor Specification

Transistor Code SI8473EDB
Transistor Type MOSFET
Control Channel Type P-Channel
Package MICRO-FOOT
Transistor SMD Code 8473E
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 4.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.041Ohm
Power Dissipation (Maximum) PD 1.1W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 1.5V

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