SI8466EDB MOSFET Transistor

The SI8466EDB is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI8466EDB transistor as follows.

SI8466EDB Transistor Specification

Transistor Code		SI8466EDB
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		MICRO-FOOT
Transistor SMD Code		8466
Drain-Source Voltage (Maximum)	VDS	8V
Gate-Source Voltage (Maximum)	VGS	5V
Drain Current (Maximum)	ID	3.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.043Ohm
Power Dissipation (Maximum)	PD	0.78W
Drain-Source Capacitance		270pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		15nS
Gate-Threshold Voltage (Maximum)		0.7V

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