SI8465DB MOSFET Transistor

The SI8465DB is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI8465DB transistor as follows.

SI8465DB Transistor Specification

Transistor Code		SI8465DB
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MICRO-FOOT
Transistor SMD Code		8465
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.104Ohm
Power Dissipation (Maximum)	PD	0.78W
Drain-Source Capacitance		125pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		20nS
Gate-Threshold Voltage (Maximum)		1.5V

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