SI8461DB MOSFET Transistor

The SI8461DB is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI8461DB transistor as follows.

SI8461DB Transistor Specification

Transistor Code		SI8461DB
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MICRO-FOOT
Transistor SMD Code		8461
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	2.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.1Ohm
Power Dissipation (Maximum)	PD	0.78W
Drain-Source Capacitance		120pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		1V

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