SI8413DB MOSFET Transistor

The SI8413DB is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI8413DB transistor as follows.

SI8413DB Transistor Specification

Transistor Code		SI8413DB
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		MICRO-FOOT
Transistor SMD Code		8413
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.048Ohm
Power Dissipation (Maximum)	PD	1.47W
Operating Junction Temperature (Maximum)		150°C
Rise Time		50nS
Gate-Threshold Voltage (Maximum)		1.4V

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