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SI8401DB MOSFET Transistor

The SI8401DB is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI8401DB transistor as follows.

Circuit diagram symbol of the SI8401DB transistor

SI8401DB Transistor Specification

Transistor Code SI8401DB
Transistor Type MOSFET
Control Channel Type P-Channel
Package MICRO-FOOT
Transistor SMD Code 8401
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 3.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.065Ohm
Power Dissipation (Maximum) PD 1.47W
Operating Junction Temperature (Maximum) 150°C
Rise Time 28nS
Gate-Threshold Voltage (Maximum) 1.4V

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