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SI7866ADP MOSFET Transistor

The SI7866ADP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7866ADP transistor as follows.

Circuit diagram symbol of the SI7866ADP transistor

SI7866ADP Transistor Specification

Transistor Code SI7866ADP
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWERPAK-SO-8
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 35A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0024Ohm
Power Dissipation (Maximum) PD 5.4W
Drain-Source Capacitance 1285pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 120nS
Gate-Threshold Voltage (Maximum) 2.2V

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