SI7860ADP MOSFET Transistor

The SI7860ADP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7860ADP transistor as follows.

SI7860ADP Transistor Specification

Transistor Code		SI7860ADP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWERPAK-SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	11A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0095Ohm
Power Dissipation (Maximum)	PD	1.8W
Operating Junction Temperature (Maximum)		150°C
Rise Time		12nS
Gate-Threshold Voltage (Maximum)		3V

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