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SI7850DP MOSFET Transistor

The SI7850DP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7850DP transistor as follows.

Circuit diagram symbol of the SI7850DP transistor

SI7850DP Transistor Specification

Transistor Code SI7850DP
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWERPAK-SO-8
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.022Ohm
Power Dissipation (Maximum) PD 1.8W
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 3V

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