SI7788DP MOSFET Transistor

The SI7788DP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7788DP transistor as follows.

SI7788DP Transistor Specification

Transistor Code		SI7788DP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWERPAK-SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	29.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0031Ohm
Power Dissipation (Maximum)	PD	5.2W
Drain-Source Capacitance		690pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		21nS
Gate-Threshold Voltage (Maximum)		2.5V

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