SI7703EDN MOSFET Transistor

The SI7703EDN is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7703EDN transistor as follows.

SI7703EDN Transistor Specification

Transistor Code		SI7703EDN
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWERPAK-1212-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	4.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.048Ohm
Power Dissipation (Maximum)	PD	1.3W
Operating Junction Temperature (Maximum)		150°C
Rise Time		4nS
Gate-Threshold Voltage (Maximum)		1V

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