SI7625DN MOSFET Transistor

The SI7625DN is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7625DN transistor as follows.

SI7625DN Transistor Specification

Transistor Code		SI7625DN
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWERPAK-1212-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	17.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.007Ohm
Power Dissipation (Maximum)	PD	3.7W
Drain-Source Capacitance		452pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		13nS
Gate-Threshold Voltage (Maximum)		2.5V

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