SI7613DN MOSFET Transistor

The SI7613DN is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7613DN transistor as follows.

SI7613DN Transistor Specification

Transistor Code		SI7613DN
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWERPAK-1212-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0087Ohm
Power Dissipation (Maximum)	PD	3.8W
Drain-Source Capacitance		535pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		40nS
Gate-Threshold Voltage (Maximum)		2.2V

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