SI7611DN MOSFET Transistor

The SI7611DN is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7611DN transistor as follows.

SI7611DN Transistor Specification

Transistor Code		SI7611DN
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWERPAK-1212-8
Drain-Source Voltage (Maximum)	VDS	40V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	9.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.025Ohm
Power Dissipation (Maximum)	PD	3.7W
Drain-Source Capacitance		215pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		150nS
Gate-Threshold Voltage (Maximum)		3V

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