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SI7476DP MOSFET Transistor

The SI7476DP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7476DP transistor as follows.

Circuit diagram symbol of the SI7476DP transistor

SI7476DP Transistor Specification

Transistor Code SI7476DP
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWERPAK-SO-8
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 15A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0053Ohm
Power Dissipation (Maximum) PD 1.9W
Operating Junction Temperature (Maximum) 150°C
Rise Time 22nS
Gate-Threshold Voltage (Maximum) 3V

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