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SI7174DP MOSFET Transistor

The SI7174DP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7174DP transistor as follows.

Circuit diagram symbol of the SI7174DP transistor

SI7174DP Transistor Specification

Transistor Code SI7174DP
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWERPAK-SO-8
Drain-Source Voltage (Maximum) VDS 75V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 21A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.007Ohm
Power Dissipation (Maximum) PD 6.25W
Drain-Source Capacitance 345pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11nS
Gate-Threshold Voltage (Maximum) 4.5V

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