SI7170DP MOSFET Transistor

The SI7170DP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7170DP transistor as follows.

SI7170DP Transistor Specification

Transistor Code		SI7170DP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWERPAK-SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	28.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0034Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		595pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		2.6V

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