SI7160DP MOSFET Transistor

The SI7160DP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7160DP transistor as follows.

SI7160DP Transistor Specification

Transistor Code		SI7160DP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWERPAK-SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	16V
Drain Current (Maximum)	ID	17.8A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0087Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		475pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		115nS
Gate-Threshold Voltage (Maximum)		2.5V

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