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SI7157DP MOSFET Transistor

The SI7157DP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7157DP transistor as follows.

Circuit diagram symbol of the SI7157DP transistor

SI7157DP Transistor Specification

Transistor Code SI7157DP
Transistor Type MOSFET
Control Channel Type P-Channel
Package POWERPAK-SO-8
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 46.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0016Ohm
Power Dissipation (Maximum) PD 6.25W
Drain-Source Capacitance 2470pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 14nS
Gate-Threshold Voltage (Maximum) 1.4V
Total Gate Charge 415nC

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