SI7139DP MOSFET Transistor

The SI7139DP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7139DP transistor as follows.

SI7139DP Transistor Specification

Transistor Code		SI7139DP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWERPAK-SO-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	22.4A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0055Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		695pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		58nS
Gate-Threshold Voltage (Maximum)		2.5V

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