SI7137DP MOSFET Transistor

The SI7137DP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7137DP transistor as follows.

SI7137DP Transistor Specification

Transistor Code		SI7137DP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWERPAK-SO-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	42A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.00195Ohm
Power Dissipation (Maximum)	PD	6.25W
Drain-Source Capacitance		2150pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		14nS
Gate-Threshold Voltage (Maximum)		1.4V
Total Gate Charge		390nC

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