SI7136DP MOSFET Transistor

The SI7136DP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7136DP transistor as follows.

SI7136DP Transistor Specification

Transistor Code		SI7136DP
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWERPAK-SO-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	29.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0032Ohm
Power Dissipation (Maximum)	PD	5W
Drain-Source Capacitance		797pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		67nS
Gate-Threshold Voltage (Maximum)		3V

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