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SI7135DP MOSFET Transistor

The SI7135DP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7135DP transistor as follows.

Circuit diagram symbol of the SI7135DP transistor

SI7135DP Transistor Specification

Transistor Code SI7135DP
Transistor Type MOSFET
Control Channel Type P-Channel
Package POWERPAK-SO-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 31.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0039Ohm
Power Dissipation (Maximum) PD 6.25W
Drain-Source Capacitance 1215pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 167nC

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