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SI7129DN MOSFET Transistor

The SI7129DN is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7129DN transistor as follows.

Circuit diagram symbol of the SI7129DN transistor

SI7129DN Transistor Specification

Transistor Code SI7129DN
Transistor Type MOSFET
Control Channel Type P-Channel
Package DFN
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 35A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0095Ohm
Power Dissipation (Maximum) PD 52.1W
Drain-Source Capacitance 385pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 9nS
Gate-Threshold Voltage (Maximum) 2.8V

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