SI7123DN MOSFET Transistor

The SI7123DN is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7123DN transistor as follows.

SI7123DN Transistor Specification

Transistor Code		SI7123DN
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		POWERPAK-1212-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	10.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0106Ohm
Power Dissipation (Maximum)	PD	1.5W
Drain-Source Capacitance		542pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		88nS
Gate-Threshold Voltage (Maximum)		1V

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