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SI7110DN MOSFET Transistor

The SI7110DN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI7110DN transistor as follows.

Circuit diagram symbol of the SI7110DN transistor

SI7110DN Transistor Specification

Transistor Code SI7110DN
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWERPAK-1212-8
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 13.5A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0053Ohm
Power Dissipation (Maximum) PD 1.5W
Operating Junction Temperature (Maximum) 150°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 2.5V

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