SI6968BEDQ MOSFET Transistor

The SI6968BEDQ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI6968BEDQ transistor as follows.

SI6968BEDQ Transistor Specification

Transistor Code		SI6968BEDQ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TSSOP-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	5.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.022Ohm
Power Dissipation (Maximum)	PD	1W
Operating Junction Temperature (Maximum)		150°C
Rise Time		330nS
Gate-Threshold Voltage (Maximum)		1.6V

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