SI6821DQ MOSFET Transistor

The SI6821DQ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI6821DQ transistor as follows.

SI6821DQ Transistor Specification

Transistor Code		SI6821DQ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP8
Drain-Source Voltage (Maximum)	VDS	20V
Drain Current (Maximum)	ID	1.7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.19Ohm
Power Dissipation (Maximum)	PD	1.2W
Operating Junction Temperature (Maximum)		150°C

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