SI6473DQ MOSFET Transistor

The SI6473DQ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI6473DQ transistor as follows.

SI6473DQ Transistor Specification

Transistor Code		SI6473DQ
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		TSSOP-8
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	8V
Drain Current (Maximum)	ID	6.2A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.0125Ohm
Power Dissipation (Maximum)	PD	1.08W
Operating Junction Temperature (Maximum)		150°C
Rise Time		33nS
Gate-Threshold Voltage (Maximum)		0.45V

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