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SI6466ADQ MOSFET Transistor

The SI6466ADQ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI6466ADQ transistor as follows.

Circuit diagram symbol of the SI6466ADQ transistor

SI6466ADQ Transistor Specification

Transistor Code SI6466ADQ
Transistor Type MOSFET
Control Channel Type N-Channel
Package P-CHANNEL, 1.8 V (G-
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 6.8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.014Ohm
Power Dissipation (Maximum) PD 1.05W
Operating Junction Temperature (Maximum) 150°C
Rise Time 34nS
Gate-Threshold Voltage (Maximum) 0.45V

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