The SI6463BDQ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.
Circuit diagram symbol of the SI6463BDQ transistor as follows.
| Transistor Code | SI6463BDQ | |
|---|---|---|
| Transistor Type | MOSFET | |
| Control Channel Type | P-Channel | |
| Package | P-CHANNEL, 1.8 V (G- | |
| Drain-Source Voltage (Maximum) | VDS | 20V |
| Gate-Source Voltage (Maximum) | VGS | 8V |
| Drain Current (Maximum) | ID | 6.2A |
| Drain-Source On-State Resistance (Maximum) | RDS(on) | 0.015Ohm |
| Power Dissipation (Maximum) | PD | 1.05W |
| Operating Junction Temperature (Maximum) | 150°C | |
| Rise Time | 40nS | |
| Gate-Threshold Voltage (Maximum) | 0.8V | |
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