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SI6404DQ MOSFET Transistor

The SI6404DQ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI6404DQ transistor as follows.

Circuit diagram symbol of the SI6404DQ transistor

SI6404DQ Transistor Specification

Transistor Code SI6404DQ
Transistor Type MOSFET
Control Channel Type N-Channel
Package TSSOP-8
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 8.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.009Ohm
Power Dissipation (Maximum) PD 1.08W
Operating Junction Temperature (Maximum) 150°C
Rise Time 35nS
Gate-Threshold Voltage (Maximum) 0.6V

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