SI5980DU MOSFET Transistor

The SI5980DU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5980DU transistor as follows.

SI5980DU Transistor Specification

Transistor Code		SI5980DU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWERPAK
Transistor SMD Code		CE*
Drain-Source Voltage (Maximum)	VDS	100V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	1.3A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.567Ohm
Power Dissipation (Maximum)	PD	2W
Drain-Source Capacitance		11pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS
Gate-Threshold Voltage (Maximum)		4V

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