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SI5908DC MOSFET Transistor

The SI5908DC is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5908DC transistor as follows.

Circuit diagram symbol of the SI5908DC transistor

SI5908DC Transistor Specification

Transistor Code SI5908DC
Transistor Type MOSFET
Control Channel Type N-Channel
Package 1206-8
Transistor SMD Code CC*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 4.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.04Ohm
Power Dissipation (Maximum) PD 1.1W
Operating Junction Temperature (Maximum) 150°C
Rise Time 36nS
Gate-Threshold Voltage (Maximum) 1V

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