SI5906DU MOSFET Transistor

The SI5906DU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5906DU transistor as follows.

SI5906DU Transistor Specification

Transistor Code		SI5906DU
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		POWERPAK
Transistor SMD Code		CD*
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.031Ohm
Power Dissipation (Maximum)	PD	2.3W
Drain-Source Capacitance		72pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		90nS
Gate-Threshold Voltage (Maximum)		2.2V

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