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SI5858DU MOSFET Transistor

The SI5858DU is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SI5858DU transistor as follows.

Circuit diagram symbol of the SI5858DU transistor

SI5858DU Transistor Specification

Transistor Code SI5858DU
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWERPAK
Transistor SMD Code JB*
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 7.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.039Ohm
Power Dissipation (Maximum) PD 2.3W
Drain-Source Capacitance 100pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 65nS
Gate-Threshold Voltage (Maximum) 1V

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